The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2016
Filed:
Sep. 02, 2014
BI O Kim, Seoul, KR;
Jin-tae Noh, Yongin-si, KR;
Su-jin Shin, Hwaseong-si, KR;
Jae-young Ahn, Seongnam-si, KR;
Ki-hyun Hwang, Seongnam-si, KR;
Bi O Kim, Seoul, KR;
Jin-Tae Noh, Yongin-si, KR;
Su-Jin Shin, Hwaseong-si, KR;
Jae-Young Ahn, Seongnam-si, KR;
Ki-Hyun Hwang, Seongnam-si, KR;
Abstract
A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes insulation layers and gate electrodes alternately stacked on a substrate, a vertical channel vertically passing through the insulation layers and the gate electrodes, and a threshold voltage controlling insulation layer, a tunnel insulation layer and a charge storage layer disposed between the vertical channel and the gate electrodes, wherein the threshold voltage controlling insulation layer is disposed between the charge storage layer and the vertical channel and including a material configured to suppress an inversion layer from being formed in the vertical channel.