The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Oct. 17, 2014
Byong-hyun Jang, Suwon-si, KR;
Dong-chul Yoo, Seongnam-si, KR;
Ki-hyun Hwang, Seongnam-si, KR;
Phil-ouk Nam, Hwaseong-si, KR;
Jae-young Ahn, Seongnam-si, KR;
Byong-Hyun Jang, Suwon-si, KR;
Dong-Chul Yoo, Seongnam-si, KR;
Ki-Hyun Hwang, Seongnam-si, KR;
Phil-Ouk Nam, Hwaseong-si, KR;
Jae-Young Ahn, Seongnam-si, KR;
Abstract
Nonvolatile memory devices include at least four cylindrical-shaped channel regions, which extend vertically from portions of a substrate located at respective vertices of at least one rhomboid when viewed in a vertical direction relative to a surface of the substrate. A charge storage layer (e.g., ONO layer) is provided on an outer sidewall of each of the cylindrical-shaped channel regions. In addition, to achieve a high degree of integration, a plurality of vertically-stacked gate electrodes are provided, which extend adjacent each of the cylindrical-shaped channel regions.