The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2017

Filed:

Feb. 26, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hye-Lan Lee, Hwaseong-si, KR;

Hong-Bae Park, Seoul, KR;

Sang-Jin Hyun, Suwon-si, KR;

Yu-Gyun Shin, Seongnam-si, KR;

Sug-Hun Hong, Yongin-si, KR;

Hoon-Joo Na, Hwaseong-si, KR;

Hyung-Seok Hong, Ansan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/78 (2006.01); H01L 27/092 (2006.01); H01L 23/485 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 21/8238 (2006.01); H01L 27/06 (2006.01); H01L 27/08 (2006.01); H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/82385 (2013.01); H01L 21/823842 (2013.01); H01L 21/823871 (2013.01); H01L 23/485 (2013.01); H01L 27/0629 (2013.01); H01L 27/0805 (2013.01); H01L 27/0811 (2013.01); H01L 29/42376 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/94 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Provided are a CMOS transistor, a semiconductor device having the transistor, and a semiconductor module having the device. The CMOS transistor may include first and second interconnection structures respectively disposed in first and second regions of a semiconductor substrate. The first and second regions of the semiconductor substrate may have different conductivity types. The first and second interconnection structures may be disposed on the semiconductor substrate. The first interconnection structure may have a different stacked structure from the second interconnection structure. The CMOS transistor may be disposed in the semiconductor device. The semiconductor device may be disposed in the semiconductor module.


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