Suwon, South Korea

Sang-Jin Hyun

This inventor holds 55 USPTO granted patents and 9 published patent applications, primarily in Semiconductor Devices (CPC class H01L). Top assignee: Samsung Electronics Co., Ltd.. Active years: 2010-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sang-Jin Hyun. Retrieved from https://idiyas.com/inventor/sang-jin-hyun

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 55 

% Patents Active = 96.4

Average Co-Inventor Count = 5.7

ph-index = 7

Forward Citations = 584(Granted Patents)

Forward Citations (Not Self Cited) = 564(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:


Years Active: 2010-2025

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Areas of Expertise:
Semiconductor Devices
Integrated Circuits
MOS Transistors
Finfet
Contact Structures
Dielectric Layer
Transistor Modules
Work Function Layers
Capping Layers
Multi-Threshold Voltage
Thermal Management
Fabrication Methods
55 patents (USPTO):Explore Patents

Title: The Innovative Journey of Sang-Jin Hyun

Introduction: Sang-Jin Hyun, a talented inventor hailing from Suwon-si, South Korea, has made significant contributions to the world of technology and innovation.

Latest Patents: Sang-Jin Hyun's latest patents focus on cutting-edge advancements in the field of artificial intelligence and renewable energy technologies, showcasing his commitment to creating a sustainable future.

Career Highlights: With a career spanning over two decades, Sang-Jin Hyun has worked with top research institutions and leading tech companies, honing his skills and expertise in developing groundbreaking inventions.

Collaborations: Throughout his career, Sang-Jin Hyun has collaborated with renowned scientists, engineers, and researchers from around the globe, fostering a culture of innovation and knowledge-sharing.

Conclusion: Sang-Jin Hyun's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and pave the way for a brighter tomorrow.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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