The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Nov. 02, 2018
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Byoung-Hoon Lee, Suwon-si, KR;
Hoon-Joo Na, Hwaseong-si, KR;
Sung-In Suh, Seoul, KR;
Min-Woo Song, Seongnam-si, KR;
Chan-Hyeong Lee, Seoul, KR;
Hu-Yong Lee, Seoul, KR;
Sang-Jin Hyun, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, KR;
Abstract
Provided are an integrated circuit device and a method of manufacturing the same. The integrated circuit device includes: a semiconductor substrate; a device isolation layer defining an active region of the semiconductor substrate; a gate insulating layer on the active region; a gate stack on the gate insulating layer; a spacer on a sidewall of the gate stack; and an impurity region provided on both sides of the gate stack, wherein the gate stack includes a metal carbide layer and a metal layer on the metal carbide layer, wherein the metal carbide layer includes a layer having a carbon content of about 0.01 at % to about 15 at %.