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For the Inventor, By the Inventor

Seoul, South Korea

Hu-Yong Lee

This inventor holds 7 USPTO granted patents and 1 published patent application. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2013-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hu-Yong Lee. Retrieved from https://idiyas.com/inventor/hu-yong-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 7 

% Patents Active = 100.0

Average Co-Inventor Count = 6.2

ph-index = 2

Forward Citations = 7(Granted Patents)


Company Filing History:

goldMedal7 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2013-2023

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7 patents (USPTO):Explore Patents
1. 11588039 - Semiconductor device (2023-02-21),
2. 11177364 - Integrated circuit device and method of manufacturing the same (2021-11-16),
3. 10756195 - Integrated circuit device and method of manufacturing the same (2020-08-25),
4. 10529816 - Semiconductor device (2020-01-07),
5. 10177042 - Semiconductor device and method for fabricating the same (2019-01-08),
6. 9786761 - Integrated circuit device having an interfacial layer and method of manufacturing the same (2017-10-10),
7. 8580629 - Method of fabricating semiconductor device using a work function control film (2013-11-12),

Title: Hu-Yong Lee: Innovator in Semiconductor Technology

Introduction

Hu-Yong Lee is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work focuses on advancing integrated circuit devices and semiconductor devices, which are crucial for modern electronics.

Latest Patents

One of Hu-Yong Lee's latest patents is for a semiconductor device that includes an active region in a substrate, at least one nano-sheet on the substrate, and a gate positioned above or below the nano-sheet. This innovative design features a gate insulating layer between the nano-sheet and the gate, as well as source/drain regions on either side of the nano-sheet. Another notable patent is for an integrated circuit device and its manufacturing method. This device comprises a semiconductor substrate, a device isolation layer, a gate insulating layer, and a gate stack, which includes a metal carbide layer and a metal layer.

Career Highlights

Hu-Yong Lee is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing advanced devices that enhance the performance and efficiency of electronic systems.

Collaborations

Throughout his career, Hu-Yong Lee has collaborated with talented individuals such as Sang-Jin Hyun and Hoon-Joo Na. These partnerships have fostered innovation and contributed to the success of various projects within the semiconductor field.

Conclusion

Hu-Yong Lee's contributions to semiconductor technology are noteworthy and impactful. His innovative patents and collaborations reflect his dedication to advancing the industry. His work at Samsung Electronics Co., Ltd. continues to shape the future of electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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