The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2017

Filed:

Dec. 01, 2015
Applicants:

Dong-soo Lee, Gunpo-si, KR;

Hu-yong Lee, Seoul, KR;

Won-keun Chung, Seoul, KR;

Hoon-joo NA, Hwaseong-si, KR;

Taek-soo Jeon, Yongin-si, KR;

Sang-jin Hyun, Suwon-si, KR;

Inventors:

Dong-soo Lee, Gunpo-si, KR;

Hu-yong Lee, Seoul, KR;

Won-keun Chung, Seoul, KR;

Hoon-joo Na, Hwaseong-si, KR;

Taek-soo Jeon, Yongin-si, KR;

Sang-jin Hyun, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B82Y 10/00 (2011.01); H01L 29/51 (2006.01); H01L 27/092 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/512 (2013.01); B82Y 10/00 (2013.01); H01L 27/0924 (2013.01); H01L 29/0673 (2013.01); H01L 29/0676 (2013.01); H01L 29/42364 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/775 (2013.01); H01L 29/785 (2013.01);
Abstract

An integrated circuit device includes a substrate including an active region, an interfacial layer including a lower insulating layer on the active region, the lower insulating layer doped with a chalcogen element having an atomic weight equal to or greater than 16, a gate insulation layer on the interfacial layer, and a gate electrode on the gate insulation layer.


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