The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Sep. 23, 2011
Hong-bae Park, Incheon, KR;
Sang-jin Hyun, Suwon-si, KR;
Hu-yong Lee, Seoul, KR;
Hoon-joo NA, Hwaseong-si, KR;
Jeong-hee Han, Hwaseong-si, KR;
Hye-lan Lee, Hwaseong-si, KR;
Hyung-seok Hong, Ansan-si, KR;
Hong-Bae Park, Incheon, KR;
Sang-Jin Hyun, Suwon-si, KR;
Hu-Yong Lee, Seoul, KR;
Hoon-Joo Na, Hwaseong-si, KR;
Jeong-Hee Han, Hwaseong-si, KR;
Hye-Lan Lee, Hwaseong-si, KR;
Hyung-Seok Hong, Ansan-si, KR;
SAMSUNG Electronics Co., Ltd., Suwon-si, KR;
Abstract
A method of fabricating a semiconductor device may include: preparing a substrate in which first and second regions are defined; forming an interlayer insulating film, which includes first and second trenches, on the substrate; forming a work function control film, which contains Al and N, along a top surface of the interlayer insulating film, side and bottom surfaces of the first trench, and side and bottom surfaces of the second trench; forming a mask pattern on the work function control film formed in the second region; injecting a work function control material into the work function control film formed in the first region to control a work function of the work function control film formed in the first region; removing the mask pattern; and forming a first metal gate electrode to fill the first trench and forming a second metal gate electrode to fill the second trench.