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H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 21/84 (2006.01); H01L 27/092 (2006.01); H01L 27/12 (2006.01); H01L 29/51 (2006.01);

U.S. Cl.

CPC ...

H01L 27/0886 (2013.01); H01L 21/82385 (2013.01); H01L 21/823821 (2013.01); H01L 21/823842 (2013.01); H01L 21/845 (2013.01); H01L 27/0924 (2013.01); H01L 27/1211 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 29/517 (2013.01);

Abstract

A semiconductor device includes a substrate and first and second gate electrodes on the substrate. The first gate electrode includes a first gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion and away from the substrate defining a first trench having a first width and a first functional film filling the first trench. The second gate electrode includes a second gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion defining a second trench having a second width different from the first width, a second functional film conforming to the second gate insulation film in the second trench and defining a third trench, and a metal region in the third trench. The first width may be less than the second width.

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