The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2020
Filed:
Jun. 05, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Moon-Kyu Park, Hwaseong-si, KR;
Jae-Yeol Song, Seoul, KR;
Hoon-Joo Na, Hwaseong-si, KR;
Yoon-Tae Hwang, Seoul, KR;
Ki-Joong Yoon, Goyang-si, KR;
Sang-Jin Hyun, Suwon-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/8238 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 27/092 (2006.01); H01L 29/43 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/02345 (2013.01); H01L 21/02356 (2013.01); H01L 21/82345 (2013.01); H01L 21/823431 (2013.01); H01L 21/823456 (2013.01); H01L 21/823462 (2013.01); H01L 21/823842 (2013.01); H01L 27/0886 (2013.01); H01L 27/092 (2013.01); H01L 29/435 (2013.01); H01L 29/4941 (2013.01); H01L 29/4958 (2013.01); H01L 29/4966 (2013.01); H01L 29/4983 (2013.01); H01L 29/518 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01); H01L 29/7854 (2013.01); H01L 29/7856 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01);
Abstract
Semiconductor device having less defects in a gate insulating film and improved reliability and methods of forming the semiconductor devices are provided. The semiconductor devices may include a gate insulating film on a substrate and a gate electrode structure on the gate insulating film. The gate electrode structure may include a lower conductive film, a silicon oxide film, and an upper conductive film sequentially stacked on the gate insulating film. The lower conductive film may include a barrier metal layer.