The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Feb. 27, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Dae-young Kwak, Seongnam-si, KR;
Ji-ye Kim, Suwon-si, KR;
Jung-hwan Chun, Hwaseong-si, KR;
Min-chan Gwak, Hwaseong-si, KR;
Dong-hyun Roh, Suwon-si, KR;
Jin-wook Lee, Seoul, KR;
Sang-jin Hyun, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
An integrated circuit device includes a fin-type active region protruding from a top surface of a substrate and extending in a first direction parallel to the top surface of the substrate, a gate structure intersecting with the fin-type active region and extending on the substrate in a second direction perpendicular to the first direction, a source/drain region on a first side of the gate structure, a first contact structure on the source/drain region, and a contact capping layer on the first contact structure. A top surface of the first contact structure has a first width in the first direction, a bottom surface of the contact capping layer has a second width greater than the first width stated above in the first direction, and the contact capping layer includes a protruding portion extending outward from a sidewall of the first contact structure.