The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2013
Filed:
Mar. 15, 2013
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sung-Woo Hyun, Seoul, KR;
Yu-Gyun Shin, Seongnam-si, KR;
Sun-Ghil Lee, Hwaseong-si, KR;
Hong-Sik Yoon, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device includes a substrate, a first region and a second region. Each of the first region and second region includes a trench, an epitaxial layer including a source/drain having a first part and a second part, the first part extending from a top surface of the substrate to a top surface of the source/drain and the second part extending from the top surface of the substrate to a bottom surface of the source/drain in the trench. The cross-sectional shape of the first part of the source/drain of the first region is the same as the cross-sectional shape of the first part of the source/drain of the second region. The cross-sectional shape of the second past of the source/drain of the find region is different from the cross-sectional shape of the second part of the source/drain of the second region.