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For the Inventor, By the Inventor

Seongnam-si, South Korea

Hong-Sik Yoon

USPTO Granted Patents = 19 

Average Co-Inventor Count = 4.2

ph-index = 6

Forward Citations = 103(Granted Patents)


Location History:

  • Gyeonggi-do, KR (2008 - 2011)
  • Seoul, KR (2009 - 2013)
  • Seongnam-si, KR (2008 - 2018)

Company Filing History:

goldMedal19 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2008-2018

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19 patents (USPTO):Explore Patents
1. 10141427 - Methods of manufacturing semiconductor devices including gate pattern, multi-channel active pattern and diffusion layer (2018-11-27),
2. 9401428 - Semiconductor devices including gate pattern, multi-channel active pattern and diffusion layer (2016-07-26),
3. 8604551 - Semiconductor device including trenches having particular structures (2013-12-10),
4. 8535753 - Methods of forming carbon nanotubes (2013-09-17),
5. 8451645 - Variable resistance memory devices and methods of programming variable resistance memory devices (2013-05-28),
6. 8415224 - Method of fabricating a semiconductor device including forming trenches having particular structures (2013-04-09),
7. 8405137 - Single transistor floating-body DRAM devices having vertical channel transistor structures (2013-03-26),
8. 8358527 - Multi-level nonvolatile memory devices using variable resistive elements (2013-01-22),
9. 8084316 - Method of fabricating single transistor floating-body DRAM devices having vertical channel transistor structures (2011-12-27),
10. 8039919 - Memory devices having a carbon nanotube (2011-10-18),
11. 8007875 - Method of forming a carbon nano-tube (2011-08-30),
12. 7982318 - Device including contact structure and method of forming the same (2011-07-19),
13. 7877865 - Method of forming a wiring having carbon nanotube (2011-02-01),
14. 7795659 - DRAM device and method of manufacturing the same (2010-09-14),
15. 7550791 - Transistor and its method of manufacture (2009-06-23),

Title: **Innovations of Hong-Sik Yoon in Semiconductor Technology**

Introduction

Hong-Sik Yoon, an accomplished inventor based in Seongnam-si, South Korea, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 19 patents, Yoon continues to push the boundaries of innovation, particularly in the design and manufacturing processes of semiconductor devices.

Latest Patents

Among his latest patents are groundbreaking methods of manufacturing semiconductor devices, which include critical features such as gate patterns, multi-channel active patterns, and diffusion layers. These innovations focus on enhancing the performance and efficiency of semiconductor devices by optimizing their structural components. The patents describe a semiconductor device that consists of a gate pattern situated on a substrate, alongside a multi-channel active pattern that intersects the gate pattern. This design includes a first region not overlapping the gate pattern and a second region that overlaps it. Additionally, the diffusion layer within the multi-channel active pattern is strategically designed, featuring an impurity concentration, along with a liner that extends on the lateral surfaces of the first region without covering its top surface. Related fabrication methods are also explored, showcasing Yoon's comprehensive approach to semiconductor manufacturing.

Career Highlights

Hong-Sik Yoon is currently associated with Samsung Electronics Co., Ltd., one of the leading technology companies in the world. His work there has been instrumental in developing cutting-edge solutions in the semiconductor industry, driving advancements that support a range of electronic applications and devices. Yoon's extensive experience and innovative mindset have established him as a notable figure within his field.

Collaborations

Throughout his career, Yoon has collaborated with proficient colleagues like In-Seok Yeo and Seung-Jae Baik. These partnerships have fostered an environment of shared knowledge and expertise, enabling the team to innovate effectively and develop patented technologies that advance the semiconductor sector.

Conclusion

Hong-Sik Yoon's dedication to innovation in semiconductor technology is evident through his numerous patents and collaborations. As he continues to work at Samsung Electronics Co., Ltd., his contributions will likely have lasting impacts on the industry, paving the way for future advancements in electronic devices and systems.

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