The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2011

Filed:

Jan. 19, 2007
Applicants:

Jang-eun Heo, Seoul, KR;

Young-moon Choi, Seoul, KR;

Sun-woo Lee, Incheon-gwangyeoksi, KR;

Hong-sik Yoon, Seoul, KR;

Kyung-rae Byun, Suwon-si, KR;

Inventors:

Jang-Eun Heo, Seoul, KR;

Young-Moon Choi, Seoul, KR;

Sun-Woo Lee, Incheon-gwangyeoksi, KR;

Hong-Sik Yoon, Seoul, KR;

Kyung-Rae Byun, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/48 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

A device includes an insulating layer on a substrate having a lower conductive pattern, the insulating layer having a contact hole that penetrates the insulating layer and exposes a portion of the lower conductive pattern, a catalytic pattern having a first portion on the exposed portion of the lower conductive pattern and a second portion on a sidewall of the contact hole, a spacer on the sidewall of the contact hole, wherein the second portion of the catalytic pattern is disposed between the spacer and the sidewall, and a contact plug in the contact hole and contacting the catalytic pattern, the contact plug being a carbon nanotube material.


Find Patent Forward Citations

Loading…