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For the Inventor, By the Inventor

Seoul, South Korea

Jang-Eun Heo

This inventor holds 8 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2008-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jang-Eun Heo. Retrieved from https://idiyas.com/inventor/jang-eun-heo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 8

% Patents Active = 87.5

Average Co-Inventor Count = 3.2

ph-index = 4

Forward Citations = 37(Granted Patents)


Company Filing History:

goldMedal8 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2008-2012

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8 patents (USPTO):Explore Patents
1. 8148710 - Phase-change memory device using a variable resistance structure (2012-04-03),
2. 7982318 - Device including contact structure and method of forming the same (2011-07-19),
3. 7811834 - Methods of forming a ferroelectric layer and methods of manufacturing a ferroelectric capacitor including the same (2010-10-12),
4. 7803657 - Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same (2010-09-28),
5. 7666789 - Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same (2010-02-23),
6. 7585683 - Methods of fabricating ferroelectric devices (2009-09-08),
7. 7583095 - High-density probe array (2009-09-01),
8. 7465604 - Methods of fabricating alignment key structures in semiconductor devices including protected electrode structures (2008-12-16),

Title: Inventor Spotlight: Jang-Eun Heo of Samsung Electronics

Introduction

Jang-Eun Heo, a prominent inventor based in Seoul, South Korea, has made significant contributions to the field of memory devices. With a total of eight patents to his name, his work focuses on innovative technologies that enhance data storage and processing capabilities.

Latest Patents

Among Jang-Eun Heo's latest inventions is a phase-change memory device that employs a variable resistance structure. This advanced memory device incorporates a first and a second contact region situated on a semiconductor substrate. It features a first insulating layer designed with contact holes to reveal the contact regions, along with a conductive layer that ensures effective connectivity. Another noteworthy patent involves a device that includes an insulating layer on a substrate housing a lower conductive pattern. This invention employs a unique contact hole that exposes the lower conductive pattern, along with an innovative catalytic pattern and carbon nanotube materials, demonstrating his expertise in cutting-edge technologies.

Career Highlights

Jang-Eun Heo is affiliated with Samsung Electronics Co., Ltd., a leading company in electronic innovation. His role at Samsung has allowed him to push the envelope in developing novel memory solutions, thereby establishing himself as a key player in the industry.

Collaborations

Throughout his career, Jang-Eun Heo has collaborated with talented coworkers such as Suk-Hun Choi and Chang-Ki Hong. Their joint efforts have contributed to the advancement of memory technology, showcasing the importance of teamwork in research and innovation.

Conclusion

With eight patents and a commitment to technological innovation, Jang-Eun Heo exemplifies the spirit of invention. His contributions to memory devices not only enhance Samsung Electronics' portfolio but also have a lasting impact on the technology landscape. As he continues his work, the future of memory technology looks promising under his guidance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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