The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2010
Filed:
Jul. 31, 2008
Applicants:
Dong-hyun Im, Seoul, KR;
Ik-soo Kim, Gyeonggi-do, KR;
Choong-man Lee, Seoul, KR;
Jang-eun Heo, Seoul, KR;
Sung-ju Lee, Gyeonggi-do, KR;
Inventors:
Dong-Hyun Im, Seoul, KR;
Ik-Soo Kim, Gyeonggi-do, KR;
Choong-Man Lee, Seoul, KR;
Jang-Eun Heo, Seoul, KR;
Sung-Ju Lee, Gyeonggi-do, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a ferroelectric layer is provided. A metal-organic source gas is provided into a chamber into which an oxidation gas is provided for a first time period to form ferroelectric grains on a substrate. A ferroelectric layer is formed by performing at least twice a step of providing a metal-organic source gas into the chamber during the first time period using a pulse method to grow the ferroelectric grains.