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Dong-Hyun Im

This inventor holds 31 USPTO granted patents and 6 published patent applications, primarily in Semiconductor Fabrication. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2009-2023.

USPTO Granted Patents = 31 (Patent Applications = 6)

% Patents Active = 90.3

Average Co-Inventor Count = 5.4

ph-index = 6

Forward Citations = 148(Granted Patents)

Location History:

Seoul, KR (2010)
Hwaseong-si, KR (2012 - 2014)
Hwasung, KR (2012 - 2014)
Gyeonggi-do, KR (2009 - 2015)
Suwon-si, KR (2016 - 2023)

Company Filing History:

31 out of 132,108

Samsung Electronics Co., Ltd.

patents

Years Active: 2009-2023

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Areas of Expertise:

Semiconductor Device

Memory Device

Fabrication Method

Nanowire Capacitors

Phase Change Layer

Variable Resistance

Ferroelectric Capacitor

Nonvolatile Memory

High-Density Probe Array

Material Layer

Self-Aligned Plug

Resistance Variable Material

31 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11715666 - Method of fabricating semiconductor device (2023-08-01),

2. 11232973 - Semiconductor device and method of fabricating the same (2022-01-25),

3. 10868016 - Semiconductor memory device and method of fabricating the same (2020-12-15),

4. 10833088 - Semiconductor memory device and method of fabricating the same (2020-11-10),

5. 10748909 - Methods of fabricating semiconductor devices (2020-08-18),

6. 10535663 - Methods of fabricating semiconductor devices (2020-01-14),

7. 10373959 - Semiconductor memory device and method of fabricating the same (2019-08-06),

8. 10211210 - Methods of fabricating semiconductor devices (2019-02-19),

9. 9646971 - Semiconductor devices including nanowire capacitors and fabricating methods thereof (2017-05-09),

10. 9543196 - Methods of fabricating semiconductor devices using nanowires (2017-01-10),

11. 9337149 - Semiconductor devices and methods of fabricating the same (2016-05-10),

12. 8980679 - Apparatus and methods for forming phase change layer and method of manufacturing phase change memory device (2015-03-17),

13. 8841643 - Semiconductor memory device including buffer electrode (2014-09-23),

14. 8790976 - Method of forming semiconductor device having self-aligned plug (2014-07-29),

15. 8785237 - Method of forming variable resistance memory device (2014-07-22),

Title: The Innovative Journey of Dong-Hyun Im

Introduction: Dong-Hyun Im, a talented inventor hailing from Hwaseong-si, South Korea, has made significant contributions to the field of technology through his groundbreaking inventions.

Latest Patents: Dong-Hyun Im holds several patents in the areas of electronics and telecommunications, with his most recent patent focusing on a revolutionary method for enhancing data transmission speeds in wireless networks.

Career Highlights: Throughout his illustrious career, Dong-Hyun Im has worked tirelessly to push the boundaries of innovation. His work has not only earned him recognition within the industry but has also paved the way for advancements in wireless communication technologies.

Collaborations: Dong-Hyun Im has collaborated with leading tech companies and research institutions to further develop his inventions. His ability to work effectively in multidisciplinary teams has been instrumental in bringing his ideas to life.

Conclusion: Dong-Hyun Im's passion for innovation and his dedication to creating cutting-edge solutions have solidified his reputation as a pioneering inventor in the field of technology. His continued commitment to pushing the boundaries of what is possible ensures that his legacy will endure for years to come.

Profile summary based on public USPTO records.

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