The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
May. 24, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Dong-Hyun Im, Suwon-si, KR;
Han-Jin Lim, Seoul, KR;
Jin-Won Ma, Hwaseong-si, KR;
Kong-Soo Lee, Hwaseong-si, KR;
Ki-Vin Im, Seongnam-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 23/535 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10814 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/535 (2013.01); H01L 23/53257 (2013.01); H01L 23/53261 (2013.01); H01L 23/53271 (2013.01); H01L 27/10823 (2013.01); H01L 29/0676 (2013.01);
Abstract
Semiconductor devices and fabricating methods thereof are provided. A semiconductor device may include a substrate, a metal layer on the substrate, a seed layer on the metal layer, a nanowire including a pillar shape on the seed layer, a dielectric film conformally covering the nanowire, and an electrode film on the dielectric film.