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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9337149 B1

PDFFull Text
Date of Patent:
May. 10, 2016

Filed:

Apr. 08, 2015

Semiconductor devices and methods of fabricating the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Dong-Hyun Im, Suwon-si, KR;

Hyun Park, Suwon-si, KR;

Soongun Lee, Hwaseong-si, KR;

Chang Seok Lee, Siheung-si, KR;

Sangwon Kim, Seoul, KR;

Seongjun Park, Seoul, KR;

Hyeon Jin Shin, Suwon-si, KR;

Hanjin Lim, Seoul, KR;

Assignee:

Samsung Electronics Co, Ltd., , KR;

Attorney:

Myers Bigel & Sibley, P.A.

Primary Examiner:

Michael Lebentritt

Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 23/532 (2006.01); H01L 27/108 (2006.01); H01L 23/528 (2006.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01); H01L 29/06 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53276 (2013.01); H01L 21/02527 (2013.01); H01L 21/32139 (2013.01); H01L 21/768 (2013.01); H01L 23/528 (2013.01); H01L 23/53209 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 23/53257 (2013.01); H01L 23/53271 (2013.01); H01L 27/10814 (2013.01); H01L 27/10852 (2013.01); H01L 27/10873 (2013.01); H01L 27/10885 (2013.01); H01L 27/10888 (2013.01); H01L 29/0642 (2013.01);
Abstract

Semiconductor devices may include a substrate including an active region defined by a device isolation layer, source/drain regions in the active region, word lines extending in a first direction parallel to the active region and being arranged in a second direction crossing the first direction, a bit line pattern extending in the second direction and crossing over a portion of the active region positioned between the word lines, and a graphene pattern covering at least a portion of the bit line pattern.

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