The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Mar. 31, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Hyun Park, Suwon-si, KR;
Dong-Hyun Im, Suwon-si, KR;
Soon-Gun Lee, Hwaseong-si, KR;
Jong-Myeong Lee, Seongnam-si, KR;
Han-Jin Lim, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/82 (2006.01); H01L 21/768 (2006.01); B82Y 10/00 (2011.01); H01L 21/02 (2006.01); H01L 27/108 (2006.01); H01L 49/02 (2006.01); H01L 29/41 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76837 (2013.01); B82Y 10/00 (2013.01); H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 21/02645 (2013.01); H01L 21/02653 (2013.01); H01L 21/76802 (2013.01); H01L 21/76844 (2013.01); H01L 21/76877 (2013.01); H01L 27/10814 (2013.01); H01L 27/10817 (2013.01); H01L 27/10855 (2013.01); H01L 28/91 (2013.01); H01L 29/413 (2013.01);
Abstract
Methods of fabricating a semiconductor device may include forming guide patterns exposing base patterns, forming first nanowires on the base patterns by performing a first nanowire growth process, forming a first molding insulating layer between the first nanowires, forming holes exposing surfaces of the base patterns by removing the nanowires, and forming first electrodes including a conductive material in the holes.