The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2015

Filed:

Aug. 31, 2009
Applicants:

Dong-hyun Im, Gyeonggi-do, KR;

Byoungjae Bae, Gyeonggi-do, KR;

Dohyung Kim, Gyeonggi-do, KR;

Sunglae Cho, Gyeonggi-do, KR;

Jinil Lee, Gyeonggi-do, KR;

Juhyung Seo, Gyeonggi-do, KR;

Hyeyoung Park, Gyeonggi-do, KR;

Takehiko Fujita, Yamanashi Prefecture, JP;

Inventors:

Dong-Hyun Im, Gyeonggi-do, KR;

Byoungjae Bae, Gyeonggi-do, KR;

Dohyung Kim, Gyeonggi-do, KR;

Sunglae Cho, Gyeonggi-do, KR;

Jinil Lee, Gyeonggi-do, KR;

Juhyung Seo, Gyeonggi-do, KR;

Hyeyoung Park, Gyeonggi-do, KR;

Takehiko Fujita, Yamanashi Prefecture, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 45/00 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 45/124 (2013.01); C23C 16/45531 (2013.01); C23C 16/45546 (2013.01); H01L 45/06 (2013.01); H01L 45/126 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01); H01L 45/148 (2013.01); H01L 45/1616 (2013.01); H01L 45/1691 (2013.01);
Abstract

Provided are apparatus and methods for forming phase change layers, and methods of manufacturing a phase change memory device. A source material is supplied to a reaction chamber, and purges from the chamber. A pressure of the chamber is varied according to the supply of the source material and the purge of the source material.


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