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For the Inventor, By the Inventor

Hwaseong-si, South Korea

Byoungjae Bae

USPTO Granted Patents = 12 

Average Co-Inventor Count = 4.8

ph-index = 3

Forward Citations = 23(Granted Patents)


Location History:

  • Gyeonggi-do, KR (2015)
  • Hwaseong-si, KR (2013 - 2023)

Company Filing History:

goldMedal12 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2013-2025

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12 patents (USPTO):Explore Patents
1. 12408350 - Semiconductor devices having uppermost interconnection lines protruding beyond top surface of lower insulating layer on cell region (2025-09-02),
2. 12336437 - Semiconductor devices and methods of fabricating the same (2025-06-17),
3. 11683992 - Magnetic memory device (2023-06-20),
4. 10347819 - Magnetic memory devices having conductive pillar structures including patterning residue components (2019-07-09),
5. 10164170 - Semiconductor device (2018-12-25),
6. 9893272 - Magnetic memory device comprising oxide patterns (2018-02-13),
7. 9634240 - Magnetic memory devices (2017-04-25),
8. 9515255 - Methods of manufacturing semiconductor devices using cavities to distribute conductive patterning residue (2016-12-06),
9. 9502643 - Semiconductor device, magnetic memory device, and method of fabricating the same (2016-11-22),
10. 8980679 - Apparatus and methods for forming phase change layer and method of manufacturing phase change memory device (2015-03-17),
11. 8810003 - Semiconductor device and method of fabricating the same (2014-08-19),
12. 8598010 - Methods of forming variable-resistance memory devices and devices formed thereby (2013-12-03),

Title: Byoungjae Bae: Pioneering Innovation in Magnetic Memory Devices

Introduction:

Byoungjae Bae, a visionary inventor based in Hwaseong-si, South Korea, is renowned for his relentless pursuit of innovation in the field of technology. With a notable portfolio of 10 patents, Byoungjae Bae continues to push the boundaries of invention, inspiring future generations of inventors worldwide.

Latest Patents:

Byoungjae Bae's latest patents showcase his expertise in magnetic memory devices. One of his innovations includes a magnetic memory device featuring an interlayer insulating layer, a bottom electrode contact, and a magnetic tunnel junction pattern. Another patent highlights his work on magnetic memory devices with conductive pillar structures, enhancing the efficiency and functionality of semiconductor devices.

Career Highlights:

At Samsung Electronics Co., Ltd., Byoungjae Bae has played a pivotal role as a leading innovator in the research and development of cutting-edge technologies. His contributions have significantly impacted the advancement of magnetic memory devices, positioning Samsung as a key player in the global tech industry.

Collaborations:

Throughout his career, Byoungjae Bae has collaborated with esteemed colleagues such as Jongchul Park and Eunsun Noh. Together, they have worked on groundbreaking projects that have revolutionized the field of semiconductor devices, earning recognition for their innovative solutions and novel approaches to technology.

Conclusion:

Byoungjae Bae's dedication to innovation and his commitment to excellence have established him as a true pioneer in the world of inventions. His contributions to magnetic memory devices and semiconductor technology continue to shape the landscape of modern electronics, leaving a lasting impact on the industry and inspiring a new wave of inventors to think creatively and push the boundaries of what is possible.

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