The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2016

Filed:

Jan. 27, 2015
Applicants:

Byoungjae Bae, Hwaseong-si, KR;

Jongchul Park, Seongnam-si, KR;

Shin Kwon, Yongin-si, KR;

Inho Kim, Suwon-si, KR;

Changwoo Sun, Hwaseong-si, KR;

Inventors:

Byoungjae Bae, Hwaseong-si, KR;

Jongchul Park, Seongnam-si, KR;

Shin Kwon, Yongin-si, KR;

Inho Kim, Suwon-si, KR;

Changwoo Sun, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/12 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01L 27/228 (2013.01); H01L 43/08 (2013.01);
Abstract

A method of fabricating a semiconductor device includes forming conductive pillars on a substrate, sequentially forming a sacrificial layer and a molding structure between the conductive pillars, forming a conductive layer on the molding structure, such that the conductive layer is connected to the conductive pillars, removing the sacrificial layer to form an air gap, removing the molding structure to form an expanded air gap, and patterning the conductive layer to open the expanded air gap.


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