The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Dec. 11, 2014
Jongchul Park, Seongnam-si, KR;
Byoungjae Bae, Hwaseong-si, KR;
Shin-jae Kang, Seoul, KR;
Eunsun Noh, Suwon-si, KR;
Kyung Rae Byun, Suwon-si, KR;
Jongchul Park, Seongnam-si, KR;
Byoungjae Bae, Hwaseong-si, KR;
Shin-Jae Kang, Seoul, KR;
Eunsun Noh, Suwon-si, KR;
Kyung Rae Byun, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Abstract
Magnetic memory devices include a plurality of first magnetic patterns on a substrate so as to be spaced apart from each other, a first insulating pattern between the first magnetic patterns to define the first magnetic patterns, and a tunnel barrier layer covering the first magnetic patterns and the first insulating pattern. The first insulating pattern includes a first magnetic element, and the first magnetic element is the same as a second magnetic element constituting the first magnetic patterns.