The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2018
Filed:
May. 04, 2015
Shin-jae Kang, Seoul, KR;
Jongchul Park, Seongnam-si, KR;
Byoungjae Bae, Hwaseong-si, KR;
Jaesuk Kwon, Seoul, KR;
Hyunsoo Shin, Bucheon-si, KR;
Shin-Jae Kang, Seoul, KR;
Jongchul Park, Seongnam-si, KR;
Byoungjae Bae, Hwaseong-si, KR;
Jaesuk Kwon, Seoul, KR;
Hyunsoo Shin, Bucheon-si, KR;
Abstract
A method of fabricating a magnetic memory device is provided. The method may include sequentially forming a first magnetic layer, a tunnel barrier layer, and a second magnetic layer on a substrate, forming a mask pattern on the second magnetic layer to expose a portion of the second magnetic layer, forming a capping insulating layer on a sidewall of the mask pattern and the portion of the second magnetic layer, injecting an oxygen ion into the portion of the second magnetic layer through the capping insulating layer to form an oxide layer, anisotropically etching the capping insulating layer to form a capping spacer, and patterning the oxide layer, the tunnel barrier layer, and the first magnetic layer using the mask pattern and the capping spacer.