The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2014

Filed:

Sep. 23, 2011
Applicants:

Gyu-hwan OH, Hwaseong-si, KR;

Shin-jae Kang, Yongin-si, KR;

Sug-woo Jung, Hwaseong-si, KR;

Dong-hyun Im, Hwaseong-si, KR;

Chan-mi Lee, Hwaseong-si, KR;

Inventors:

Gyu-Hwan Oh, Hwaseong-si, KR;

Shin-Jae Kang, Yongin-si, KR;

Sug-Woo Jung, Hwaseong-si, KR;

Dong-Hyun Im, Hwaseong-si, KR;

Chan-Mi Lee, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 45/06 (2013.01); H01L 27/2409 (2013.01); H01L 45/144 (2013.01); H01L 45/126 (2013.01); H01L 27/2472 (2013.01); H01L 45/143 (2013.01); H01L 45/04 (2013.01); H01L 45/141 (2013.01); H01L 45/146 (2013.01); H01L 45/1233 (2013.01); H01L 27/224 (2013.01);
Abstract

A semiconductor device includes a switching device disposed on a substrate. A buffer electrode pattern is disposed on the switching device. The buffer electrode pattern includes a first region having a first vertical thickness, and a second region having a second vertical thickness smaller than the first vertical thickness. A lower electrode pattern is disposed on the first region of the buffer electrode pattern. A trim insulating pattern is disposed on the second region of the buffer electrode pattern. A variable resistive pattern is disposed on the lower electrode pattern.


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