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For the Inventor, By the Inventor

Hwaseong-si, South Korea

Gyu-Hwan Oh

USPTO Granted Patents = 23 

Average Co-Inventor Count = 3.2

ph-index = 5

Forward Citations = 110(Granted Patents)


Location History:

  • Hwasung, KR (2012)
  • Gyeonggi-do, KR (2012)
  • Hwaseong-si, KR (2010 - 2020)

Company Filing History:

goldMedal23 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2010-2020

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23 patents (USPTO):
1. 10692933 - Variable resistance memory device (2020-06-23),
2. 9196827 - Non-volatile memory devices having dual heater configurations and methods of fabricating the same (2015-11-24),
3. 9130160 - Non-volatile memory device having multi-level cells and method of forming the same (2015-09-08),
4. 8884263 - Non-volatile memory device having conductive buffer pattern and method of fabricating the same (2014-11-11),
5. 8872148 - Phase-change memory devices (2014-10-28),
6. 8841643 - Semiconductor memory device including buffer electrode (2014-09-23),
7. 8830739 - Non-volatile memory device having multi-level cells and method of forming the same (2014-09-09),
8. 8790976 - Method of forming semiconductor device having self-aligned plug (2014-07-29),
9. 8785213 - Method of fabricating non-volatile memory device having small contact and related devices (2014-07-22),
10. 8703573 - Semiconductor device and method of manufacturing the same (2014-04-22),
11. 8680500 - Phase change memory devices having buried metal silicide patterns (2014-03-25),
12. 8557627 - Methods of forming a phase change layer and methods of fabricating a phase change memory device including the same (2013-10-15),
13. 8551805 - Methods of manufacturing phase-change memory devices (2013-10-08),
14. 8513136 - Memory devices and method of manufacturing the same (2013-08-20),
15. 8507353 - Method of forming semiconductor device having self-aligned plug (2013-08-13),

Title: The Innovative Mind of Gyu-Hwan Oh: Pioneering Memory Devices in Hwaseong-si, South Korea

Introduction:

In the realm of memory devices, one name stands out for his pioneering work in variable resistance memory devices and non-volatile memory devices with dual heater configurations - Gyu-Hwan Oh. Hailing from Hwaseong-si, South Korea, Oh has made significant contributions to the field with his 23 patents and groundbreaking inventions.

Latest Patents:

Gyu-Hwan Oh's latest patents showcase his expertise and ingenuity in the field of memory devices. One remarkable invention is the Variable Resistance Memory Device, which features a first conductive line, stacked structures with lower electrodes and variable resistance patterns, and a unique mold pattern. Another notable patent is the Non-Volatile Memory Devices with Dual Heater Configurations, which includes a data storage structure with conductive heater elements and innovative fabrication methods.

Career Highlights:

Working at Samsung Electronics Co., Ltd., Gyu-Hwan Oh has been instrumental in driving innovation and pushing the boundaries of memory device technology. Through his research and development efforts, he has not only secured numerous patents but has also garnered recognition for his contributions to the industry.

Collaborations:

In his journey of innovation, Gyu-Hwan Oh has collaborated with talented individuals such as Doo-Hwan Park and Dong-Hyun Im. These collaborative efforts have not only enriched his projects but have also fostered a culture of creativity and teamwork in the workplace.

Conclusion:

Gyu-Hwan Oh's dedication to pushing the boundaries of memory device technology has cemented his reputation as a visionary inventor in Hwaseong-si, South Korea. With a strong portfolio of patents and a track record of groundbreaking inventions, Oh continues to inspire and shape the future of memory devices with his innovative contributions.

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