The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2013

Filed:

May. 11, 2012
Applicants:

Gyu-hwan OH, Hwaseong-si, KR;

Doo-hwan Park, Yongin-si, KR;

Kyung-min Chung, Hwaseong-si, KR;

Inventors:

Gyu-Hwan Oh, Hwaseong-si, KR;

Doo-Hwan Park, Yongin-si, KR;

Kyung-Min Chung, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/44 (2006.01); H01L 21/4763 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 41/00 (2013.01);
U.S. Cl.
CPC ...
Abstract

A phase-change memory device includes a word line on a substrate and a phase-change memory cell on the word line and comprising a phase-change material pattern. The device also includes a non-uniform conductivity layer pattern comprising a conductive region on the phase-change material pattern and a non-conductive region contiguous therewith. The device further includes a bit line on the conductive region of the non-uniform conductivity layer pattern. In some embodiments, the phase-change memory cell may further include a diode on the word line, a heating electrode on the diode and wherein the phase-change material layer is disposed on the heating electrode. An ohmic contact layer and a contact plug may be disposed between the diode and the heating electrode.


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