Doo-Hwan Park

This inventor holds 23 USPTO granted patents and 9 published patent applications, primarily in Semiconductor Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2010-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Doo-Hwan Park. Retrieved from https://idiyas.com/inventor/doo-hwan-park

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 23 (Patent Applications = 9)

% Patents Active = 91.3

Average Co-Inventor Count = 4.6

ph-index = 5

Forward Citations = 126(Granted Patents)

Location History:

Seoul, KR (2010 - 2012)
Gyeonggi-do, KR (2010 - 2013)
Yongin-si, KR (2012 - 2021)

Company Filing History:

23 out of 132,108

Samsung Electronics Co., Ltd.

patents

Years Active: 2010-2021

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Areas of Expertise:

Semiconductor Device

Non-Volatile Memory

Phase-Change Memory

Fabrication Method

Memory Device

Chalcogenide Compound

Conductive Buffer

Heater Configuration

Self-Aligned Plug

Buried Metal Silicide

Contact Structure

23 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11075160 - Semiconductor device and method for fabricating thereof (2021-07-27),

2. 10923402 - Semiconductor device and method of manufacturing the same (2021-02-16),

3. 10847454 - Semiconductor devices (2020-11-24),

4. 10510658 - Semiconductor devices (2019-12-17),

5. 9196827 - Non-volatile memory devices having dual heater configurations and methods of fabricating the same (2015-11-24),

6. 8884263 - Non-volatile memory device having conductive buffer pattern and method of fabricating the same (2014-11-11),

7. 8872148 - Phase-change memory devices (2014-10-28),

8. 8790976 - Method of forming semiconductor device having self-aligned plug (2014-07-29),

9. 8785213 - Method of fabricating non-volatile memory device having small contact and related devices (2014-07-22),

10. 8680500 - Phase change memory devices having buried metal silicide patterns (2014-03-25),

11. 8557627 - Methods of forming a phase change layer and methods of fabricating a phase change memory device including the same (2013-10-15),

12. 8551805 - Methods of manufacturing phase-change memory devices (2013-10-08),

13. 8513136 - Memory devices and method of manufacturing the same (2013-08-20),

14. 8507353 - Method of forming semiconductor device having self-aligned plug (2013-08-13),

15. 8445354 - Methods for manufacturing a phase-change memory device (2013-05-21),

Title: Doo-Hwan Park: Pioneering Innovation in Semiconductor Technology

Introduction: Doo-Hwan Park, a visionary inventor hailing from Yongin-si, South Korea, stands as a beacon of innovation, inspiring others to think outside the box and pursue their creative ideas. With 23 patents under his name, Park's contributions to the world of inventions have left a lasting impact, shaping the future of technology.

Latest Patents: Among his latest patents is a groundbreaking "Semiconductor device and method for fabricating thereof", showcasing his expertise in semiconductor technology. This invention highlights his knack for developing cutting-edge solutions in the field. Another notable patent is the "Semiconductor device and method of manufacturing the same", emphasizing his innovative methods in semiconductor manufacturing processes.

Career Highlights: Park's impressive career is embedded within Samsung Electronics Co., Ltd., a leading technology company where he continues to push the boundaries of innovation. His work demonstrates a relentless pursuit of excellence and a deep understanding of semiconductor technologies, positioning him as a key player in the industry.

Collaborations: Park's work is further enriched through collaborations with esteemed colleagues such as Gyu-Hwan Oh and Yong-Ho Ha. Together, they form a dynamic team driving innovation and pushing the envelope in semiconductor technology development. Their combined efforts have resulted in impactful inventions that have garnered recognition in the industry.

Conclusion: In conclusion, Doo-Hwan Park's relentless dedication to innovation and his penchant for pushing the boundaries of semiconductor technology underscore his importance in the field. His inventive spirit continues to inspire others to think creatively and pursue groundbreaking ideas, shaping the landscape of technology for years to come.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

9 patents pending: