The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
Feb. 08, 2012
Yong-ho Ha, Gyeonggi-do, KR;
Bong-jin Kuh, Gyeonggi-do, KR;
Han-bong Ko, Gyeonggi-do, KR;
Doo-hwan Park, Gyeonggi-do, KR;
Sang-wook Lim, Gyeonggi-do, KR;
Hee-ju Shin, Gyeonggi-do, KR;
Yong-Ho Ha, Gyeonggi-do, KR;
Bong-Jin Kuh, Gyeonggi-do, KR;
Han-Bong Ko, Gyeonggi-do, KR;
Doo-Hwan Park, Gyeonggi-do, KR;
Sang-Wook Lim, Gyeonggi-do, KR;
Hee-Ju Shin, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
A method of manufacturing a phase-change memory device comprises forming a contact region on a substrate, forming a lower electrode electrically connected to the contact region, forming a phase-change material layer on the lower electrode using a chalcogenide compound target including carbon and metal, or carbon, nitrogen and metal, and forming an upper electrode on the phase-change material layer.