The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
May. 31, 2012
Doo-hwan Park, Yongin-si, KR;
Gyu-hwan OH, Hwaseong-si, KR;
Dong-whee Kwon, Yongin-si, KR;
Kyung-min Chung, Hwaseong-si, KR;
Doo-hwan Park, Yongin-si, KR;
Gyu-hwan Oh, Hwaseong-si, KR;
Dong-whee Kwon, Yongin-si, KR;
Kyung-min Chung, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Memory devices and methods of forming memory devices including forming a plurality of preliminary electrodes, each of the plurality of preliminary electrodes including a protruding region, protruding from a first mold insulating layer, forming a second mold insulating layer on the first mold insulating layer, removing at least a portion of the plurality of preliminary electrodes to form a plurality of openings in the second mold insulating layer and a plurality of lower electrodes, and forming a plurality of memory elements in the plurality of openings. Memory devices and methods of forming memory devices including forming one or more insulating layers on sidewalls of all or part of a plurality of lower electrodes and/or a plurality of memory elements.