The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Jan. 07, 2013
Doo-hwan Park, Yongin-si, KR;
Gyu-hwan OH, Hwaseong-si, KR;
Jeong-min Park, Hwaseong-si, KR;
Kyung-min Chung, Hwaseong-si, KR;
Doo-Hwan Park, Yongin-si, KR;
Gyu-Hwan Oh, Hwaseong-si, KR;
Jeong-Min Park, Hwaseong-si, KR;
Kyung-Min Chung, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A phase-change memory device includes a diode, a plug, a doping layer pattern, a phase-change layer pattern and an upper electrode. The diode is disposed on a substrate. The plug is disposed on the diode and has a bottom surface whose area is equal to the area of a top surface of the diode. The plug is formed of metal or a conductive metallic compound. The doping layer pattern is disposed on the plug and has a bottom surface whose area is equal to the area of a top surface of the plug, and includes the same metal or conductive metallic compound as the plug. The phase-change layer pattern is disposed on the doping layer pattern. The upper electrode is disposed on the phase-change layer pattern.