The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
Jun. 13, 2012
Applicants:
Gyu-hwan OH, Hwaseong-si, KR;
Byoung-jae Bae, Hwaseong-si, KR;
Dong-hyun Im, Hwaseong-si, KR;
Doo-hwan Park, Yongin-si, KR;
Inventors:
Gyu-Hwan Oh, Hwaseong-si, KR;
Byoung-Jae Bae, Hwaseong-si, KR;
Dong-Hyun Im, Hwaseong-si, KR;
Doo-Hwan Park, Yongin-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 47/00 (2006.01); H01L 27/148 (2006.01); H01L 29/768 (2006.01);
U.S. Cl.
CPC ...
Abstract
A phase change memory device includes an impurity region on a substrate, the impurity region being in an active region, a metal silicide pattern at least partially buried in the impurity region, a diode on the impurity region, a lower electrode on the diode, a phase change layer pattern on the lower electrode, and an upper electrode on the phase change layer pattern.