The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Jun. 14, 2012
Applicants:
Gyu-hwan OH, Hwaseong-si, KR;
Doo-hwan Park, Yongin-si, KR;
Inventors:
Gyu-Hwan Oh, Hwaseong-si, KR;
Doo-Hwan Park, Yongin-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01); H01L 29/06 (2006.01); H01L 27/102 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2463 (2013.01); H01L 45/06 (2013.01); H01L 45/143 (2013.01); H01L 29/0676 (2013.01); H01L 45/1253 (2013.01); H01L 45/1233 (2013.01); H01L 45/144 (2013.01); H01L 27/2409 (2013.01); H01L 27/1021 (2013.01); H01L 45/1683 (2013.01); H01L 45/141 (2013.01);
Abstract
A diode may be formed within a molding layer on a substrate. A conductive buffer pattern having a greater planar area than the diode may be on the diode and molding layer. An electrode structure may be on the conductive buffer pattern. A data storage pattern may be on the electrode structure. One lateral surface of the conductive buffer pattern may be vertically aligned with one lateral surface of the electrode structure.