The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Mar. 20, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Eun-Chul Seo, Hwaseong-si, KR;
Kyoungpil Park, Yongin-si, KR;
Doo-Hwan Park, Yongin-si, KR;
Seongho Park, Suwon-si, KR;
Aee Young Park, Yongin-si, KR;
Kyungmin Chung, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method of manufacturing a semiconductor device may include forming a hardmask layer on a substrate, forming a first mold pattern on the hardmask layer using a first photolithography process, conformally forming a spacer layer on the first mold pattern and on portions of the hardmask layer exposed by the first mold pattern, forming a first mold layer using a second photolithography process. The first mold layer may have a first opening that exposes a portion of the spacer layer. The method may include forming a spacer pattern by anisotropically etching the portion of the spacer layer exposed by the first opening until a portion of a top surface of the hardmask layer is exposed, and using the spacer pattern as an etching mask to pattern the hardmask layer.