The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Mar. 09, 2013
Applicant:
Gyu-hwan OH, Hwaseong-si, KR;
Inventor:
Gyu-Hwan Oh, Hwaseong-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01); G11C 11/56 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/04 (2013.01); H01L 27/2463 (2013.01); G11C 13/0004 (2013.01); H01L 45/1233 (2013.01); H01L 45/1273 (2013.01); G11C 11/5678 (2013.01); H01L 27/2409 (2013.01); H01L 45/144 (2013.01); H01C 45/06 (2013.01); G11C 13/0069 (2013.01); H01L 45/1683 (2013.01); H01L 45/141 (2013.01); H01L 45/143 (2013.01);
Abstract
A non-volatile memory device including multi-level cells is provided. The device includes first and second conductive patterns. Additionally, the device includes an electrode structure and a data storage pattern between the first and second conductive patterns. The data storage pattern may include a phase change material and a first vertical thickness of a first portion of the data storage pattern may be less than a second vertical thickness of a second portion of the data storage pattern. The electrode structure may include first and second electrodes and a vertical thickness of the first electrode may be greater than that of the second electrode.