The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2014
Filed:
Mar. 16, 2012
Gyu-hwan OH, Hwaseong-si, KR;
Dong-hyun Kim, Hwaseong-si, KR;
Kyung-min Chung, Hwaseong-si, KR;
Dong-hyun Im, Hwaseong-si, KR;
Gyu-Hwan Oh, Hwaseong-si, KR;
Dong-Hyun Kim, Hwaseong-si, KR;
Kyung-Min Chung, Hwaseong-si, KR;
Dong-Hyun Im, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A method of manufacturing the semiconductor device includes sequentially forming first to third mold layer patterns on a substrate and spaced apart from each other, forming a first semiconductor pattern between the first mold layer pattern and the second mold layer pattern, and a second semiconductor pattern between the second mold layer pattern and the third mold layer pattern, forming a first trench between the first mold layer pattern and the third mold layer pattern by removing a portion of the second mold layer pattern and portions of the first and second semiconductor patterns, depositing a material for a lower electrode conformally along side and bottom surfaces of the first trench, and forming first and second lower electrodes separated from each other on the first and second semiconductor patterns, respectively, by removing a portion of the material for a lower electrode positioned on the second mold layer pattern.