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For the Inventor, By the Inventor

Seoul, South Korea

Choong-Man Lee

USPTO Granted Patents = 12

Average Co-Inventor Count = 3.9

ph-index = 5

Forward Citations = 76(Granted Patents)


Location History:

  • Gyeonggi-do, KR (2009 - 2011)
  • Seoul, KR (2009 - 2013)
  • Seongnam-si, KR (2014)

Company Filing History:

goldMedal12 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2009-2014

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12 patents (USPTO):Explore Patents
1. 8785276 - Methods for fabricating a cell string and a non-volatile memory device including the cell string (2014-07-22),
2. 8525244 - Germanium compound, semiconductor device fabricated using the same, and methods of forming the same (2013-09-03),
3. 8080839 - Electro-mechanical transistor (2011-12-20),
4. 8034683 - Method of forming a phase change material layer, method of forming a phase change memory device using the same, and a phase change memory device so formed (2011-10-11),
5. 8026543 - Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same (2011-09-27),
6. 7858464 - Methods of manufacturing non-volatile memory devices having insulating layers treated using neutral beam irradiation (2010-12-28),
7. 7855145 - Gap filling method and method for forming semiconductor memory device using the same (2010-12-21),
8. 7811834 - Methods of forming a ferroelectric layer and methods of manufacturing a ferroelectric capacitor including the same (2010-10-12),
9. 7585692 - Thin film layer, heating electrode, phase change memory including thin film layer and methods for forming the same (2009-09-08),
10. 7585683 - Methods of fabricating ferroelectric devices (2009-09-08),
11. 7569417 - Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory device (2009-08-04),
12. 7482616 - Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same (2009-01-27),

Title: Innovations of Choong-Man Lee

Introduction

Choong-Man Lee is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 12 patents. His work has been instrumental in advancing the capabilities of non-volatile memory devices.

Latest Patents

Among his latest patents are methods for fabricating a cell string and a non-volatile memory device that includes the cell string. This method involves forming an interlayer dielectric layer, a sacrificial layer, and a semiconductor pattern on a semiconductor substrate. The interlayer dielectric layer and the sacrificial layer are formed in a first direction parallel to the semiconductor substrate, while the semiconductor pattern is formed in a second direction perpendicular to the substrate. The process includes patterning the interlayer dielectric layer and the sacrificial layer to create an opening, filling this opening with metal, and annealing the semiconductor pattern. Another notable patent involves a germanium (Ge) compound with the chemical formula GeRxRy, where 'R' represents an alkyl group, and 'R' can be hydrogen, an amino group, an allyl group, or a vinyl group. This patent also covers methods of forming the Ge compound and fabricating phase change memory devices using it.

Career Highlights

Choong-Man Lee is currently employed at Samsung Electronics Co., Ltd., where he continues to innovate in the semiconductor field. His work has garnered attention for its potential applications in improving memory devices.

Collaborations

He collaborates with notable colleagues, including Sung-lae Cho and Jin-il Lee, who contribute to his research and development efforts.

Conclusion

Choong-Man Lee's contributions to semiconductor technology and his innovative patents highlight his role as a leading inventor in the industry. His work continues to influence advancements in memory devices and semiconductor fabrication methods.

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