The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Dec. 31, 2008
Soo-doo Chae, Gyeonggi-do, KR;
Chung-woo Kim, Gyeonggi-do, KR;
Choong-man Lee, Seoul, KR;
Yung-hee Lee, Seoul, KR;
Chan-jin Park, Gyeonggi-do, KR;
Sung-wook Hwang, Seoul, KR;
Jeong-hee Han, Gyeonggi-do, KR;
Do-haing Lee, Gyeonggi-do, KR;
Jin-seok Lee, Seoul, KR;
Soo-doo Chae, Gyeonggi-do, KR;
Chung-woo Kim, Gyeonggi-do, KR;
Choong-man Lee, Seoul, KR;
Yung-hee Lee, Seoul, KR;
Chan-jin Park, Gyeonggi-do, KR;
Sung-wook Hwang, Seoul, KR;
Jeong-hee Han, Gyeonggi-do, KR;
Do-haing Lee, Gyeonggi-do, KR;
Jin-seok Lee, Seoul, KR;
Abstract
Methods of manufacturing non-volatile memory devices that can reduce or prevent loss of charges stored in a charge storage layer and/or that can improve charge storage capacity by neutral beam irradiation of an insulating layer are disclosed. The methods include forming a tunneling insulating layer on a substrate, forming a charge storage layer on the tunneling insulating layer, forming a blocking insulating layer on the charge storage layer, irradiating the blocking insulating layer and/or the tunneling insulating layer with a neutral beam, and forming a gate conductive layer on the blocking insulating layer.