Company Filing History:
Years Active: 2010
Title: Innovations of Chan-jin Park in Non-Volatile Memory Devices
Introduction
Chan-jin Park is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of non-volatile memory devices. His innovative methods focus on enhancing the performance and reliability of these devices.
Latest Patents
Chan-jin Park holds 1 patent for his work titled "Methods of manufacturing non-volatile memory devices having insulating layers treated using neutral beam irradiation." This patent discloses methods that can reduce or prevent the loss of charges stored in a charge storage layer. Additionally, it aims to improve charge storage capacity through the neutral beam irradiation of an insulating layer. The methods include forming a tunneling insulating layer on a substrate, followed by a charge storage layer, and a blocking insulating layer. The process involves irradiating the blocking insulating layer and/or the tunneling insulating layer with a neutral beam, culminating in the formation of a gate conductive layer on the blocking insulating layer.
Career Highlights
Chan-jin Park is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to focus on cutting-edge innovations in memory technology.
Collaborations
He has collaborated with notable coworkers such as Soo-doo Chae and Chung-woo Kim, contributing to advancements in their shared field of expertise.
Conclusion
Chan-jin Park's innovative methods in the manufacturing of non-volatile memory devices highlight his significant role in advancing technology. His contributions are essential for improving the efficiency and reliability of memory storage solutions.