The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2011
Filed:
Aug. 28, 2009
Sandip Tiwari, Ithaca, NY (US);
Moon-kyung Kim, Ithaca, NY (US);
Joshua Mark Rubin, Ithaca, NY (US);
Soo-doo Chae, Yongin-si, KR;
Choong-man Lee, Seoul, KR;
Ravishankar Sundararaman, Ithaca, NY (US);
Sandip Tiwari, Ithaca, NY (US);
Moon-Kyung Kim, Ithaca, NY (US);
Joshua Mark Rubin, Ithaca, NY (US);
Soo-Doo Chae, Yongin-si, KR;
Choong-Man Lee, Seoul, KR;
Ravishankar Sundararaman, Ithaca, NY (US);
Samsung Electronics Co. Ltd., Suwon-Won Si, KR;
Abstract
An electro-mechanical transistor includes a source electrode and a drain electrode spaced apart from each other. A source pillar is between the substrate and the source electrode. A drain pillar is between the substrate and the drain electrode. A moveable channel is spaced apart from the source electrode and the drain electrode. A gate nano-pillar is between the moveable channel and the substrate. A first dielectric layer is between the moveable channel and the gate nano-pillar. A second dielectric layer is between the source pillar and the source electrode. A third dielectric layer is between the drain pillar and the drain electrode.