The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2009
Filed:
Jul. 17, 2007
Applicants:
Dong-hyun Im, Gyeonggi-do, KR;
Byoung-jae Bae, Gyeonggi-do, KR;
Ik-soo Kim, Gyeonggi-do, KR;
Jang-eun Heo, Seoul, KR;
Choong-man Lee, Seoul, KR;
Dong-chul Yoo, Gyeonggi-do, KR;
Inventors:
Dong-Hyun Im, Gyeonggi-do, KR;
Byoung-Jae Bae, Gyeonggi-do, KR;
Ik-Soo Kim, Gyeonggi-do, KR;
Jang-Eun Heo, Seoul, KR;
Choong-Man Lee, Seoul, KR;
Dong-Chul Yoo, Gyeonggi-do, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of fabricating a ferroelectric device includes forming a ferroelectric layer on a substrate in a reaction chamber. An inactive gas is provided into the reaction chamber while unloading the substrate therefrom to thereby substantially inhibit formation of an impurity layer on the ferroelectric layer.