The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2010
Filed:
Apr. 13, 2007
Applicants:
Jin-il Lee, Seongnam-si, KR;
Choong-man Lee, Seoul, KR;
Sung-lae Cho, Yongin-si, KR;
Sang-wook Lim, Yongin-si, KR;
Hye-young Park, Seongnam-si, KR;
Young-lim Park, Anyang-si, KR;
Inventors:
Jin-Il Lee, Seongnam-si, KR;
Choong-Man Lee, Seoul, KR;
Sung-Lae Cho, Yongin-si, KR;
Sang-Wook Lim, Yongin-si, KR;
Hye-Young Park, Seongnam-si, KR;
Young-Lim Park, Anyang-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
A gap filling method and a method for forming a memory device, including forming an insulating layer on a substrate, forming a gap region in the insulating layer, and repeatedly forming a phase change material layer and etching the phase change material layer to form a phase change material layer pattern in the gap region.