Jin-il Lee

This inventor holds 26 USPTO granted patents and 2 published patent applications, primarily in Phase Change Memory. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2006-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jin-il Lee. Retrieved from https://idiyas.com/inventor/jin-il-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26 (Patent Applications = 2)

% Patents Active = 88.5

Average Co-Inventor Count = 5.4

ph-index = 6

Forward Citations = 135(Granted Patents)

Location History:

Kyungki-do, KR (2006)
Sungnam, KR (2006 - 2010)
Gyeonggi-do, KR (2007 - 2014)
Seongnam-si, KR (2009 - 2014)
Hwaseong-si, KR (2013 - 2014)

Company Filing History:

26 out of 132,108

Samsung Electronics Co., Ltd.

patents

Years Active: 2006-2014

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Areas of Expertise:

Phase Change Memory Device

Semiconductor Fabrication

Data Processing Device

Germanium Compound

Metal-Insulator-Metal Capacitors

Variable Resistance Memory Cells

Capacitor Structures

Thin Film Manufacturing

Error Detection Code

Memory Device

Data Output Buffer

Contact Structures

26 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8852686 - Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device (2014-10-07),

2. 8834968 - Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device (2014-09-16),

3. 8703237 - Methods of forming a material layer and methods of fabricating a memory device (2014-04-22),

4. 8645790 - Data processing device and method using error detection code, method of compensating for data skew, and semiconductor device having the data processing device (2014-02-04),

5. 8553471 - Data output buffer and memory device (2013-10-08),

6. 8531898 - On-die termination circuit, data output buffer and semiconductor memory device (2013-09-10),

7. 8525244 - Germanium compound, semiconductor device fabricated using the same, and methods of forming the same (2013-09-03),

8. 8263963 - Phase change memory device (2012-09-11),

9. 8187914 - Methods of forming a phase change memory device (2012-05-29),

10. 8142846 - Method of forming phase change material layer using Ge(II) source, and method of fabrication phase change memory device (2012-03-27),

11. 8133758 - Method of fabricating phase-change memory device having TiC layer (2012-03-13),

12. 8034683 - Method of forming a phase change material layer, method of forming a phase change memory device using the same, and a phase change memory device so formed (2011-10-11),

13. 8021977 - Methods of forming contact structures and semiconductor devices fabricated using contact structures (2011-09-20),

14. 7943502 - Method of forming a phase change memory device (2011-05-17),

15. 7867880 - Metal precursors for low temperature deposition and methods of forming a metal thin layer and manufacturing a phase-change memory device using the metal precursors (2011-01-11),

Innovative Contributions of Jin-il Lee in Phase Change Technology

Introduction

Jin-il Lee is a distinguished inventor based in Seongnam-si, South Korea, credited with an impressive portfolio of 26 patents. His work primarily focuses on advanced technologies in phase change materials, which have significant applications in memory devices.

Latest Patents

Among Jin-il Lee's latest innovations are two notable patents: the "Method of Forming Phase Change Material Layer Using Ge(II) Source" and the "Method of Fabricating Phase Change Memory Device." These patents elaborate a sophisticated process involving the supply of a reaction gas, which includes a specific composition, into a reaction chamber. The method emphasizes the use of Ge(II) as a first source, alongside a second source, optimizing the fabrication of phase change material layers crucial for memory device functionality.

Career Highlights

Jin-il Lee's career has been prominently marked by his role at Samsung Electronics Co., Ltd., where he has been instrumental in pioneering research and development in memory technologies. His innovative mindset and technical expertise have propelled the company’s advancements in phase change materials.

Collaborations

Throughout his career, Jin-il Lee has collaborated with esteemed colleagues like Sung-lae Cho and Young-Lim Park. Their combined efforts in research have led to groundbreaking advancements in the field, fostering a productive environment for innovation within Samsung Electronics.

Conclusion

Jin-il Lee's contributions to phase change technology are significant, underscoring his role as a key inventor in this field. His ongoing research efforts and collaboration with fellow innovators continue to drive progress in memory device technology, solidifying his status as a notable figure in the realm of inventions.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

2 patents pending: