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For the Inventor, By the Inventor

Seongnam-si, South Korea

Jin-il Lee

USPTO Granted Patents = 26 

Average Co-Inventor Count = 5.4

ph-index = 6

Forward Citations = 134(Granted Patents)


Location History:

  • Kyungki-do, KR (2006)
  • Sungnam, KR (2006 - 2010)
  • Gyeonggi-do, KR (2007 - 2014)
  • Seongnam-si, KR (2009 - 2014)
  • Hwaseong-si, KR (2013 - 2014)

Company Filing History:

goldMedal26 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2006-2014

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26 patents (USPTO):Explore Patents
1. 8852686 - Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device (2014-10-07),
2. 8834968 - Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device (2014-09-16),
3. 8703237 - Methods of forming a material layer and methods of fabricating a memory device (2014-04-22),
4. 8645790 - Data processing device and method using error detection code, method of compensating for data skew, and semiconductor device having the data processing device (2014-02-04),
5. 8553471 - Data output buffer and memory device (2013-10-08),
6. 8531898 - On-die termination circuit, data output buffer and semiconductor memory device (2013-09-10),
7. 8525244 - Germanium compound, semiconductor device fabricated using the same, and methods of forming the same (2013-09-03),
8. 8263963 - Phase change memory device (2012-09-11),
9. 8187914 - Methods of forming a phase change memory device (2012-05-29),
10. 8142846 - Method of forming phase change material layer using Ge(II) source, and method of fabrication phase change memory device (2012-03-27),
11. 8133758 - Method of fabricating phase-change memory device having TiC layer (2012-03-13),
12. 8034683 - Method of forming a phase change material layer, method of forming a phase change memory device using the same, and a phase change memory device so formed (2011-10-11),
13. 8021977 - Methods of forming contact structures and semiconductor devices fabricated using contact structures (2011-09-20),
14. 7943502 - Method of forming a phase change memory device (2011-05-17),
15. 7867880 - Metal precursors for low temperature deposition and methods of forming a metal thin layer and manufacturing a phase-change memory device using the metal precursors (2011-01-11),

Innovative Contributions of Jin-il Lee in Phase Change Technology

Introduction

Jin-il Lee is a distinguished inventor based in Seongnam-si, South Korea, credited with an impressive portfolio of 26 patents. His work primarily focuses on advanced technologies in phase change materials, which have significant applications in memory devices.

Latest Patents

Among Jin-il Lee's latest innovations are two notable patents: the "Method of Forming Phase Change Material Layer Using Ge(II) Source" and the "Method of Fabricating Phase Change Memory Device." These patents elaborate a sophisticated process involving the supply of a reaction gas, which includes a specific composition, into a reaction chamber. The method emphasizes the use of Ge(II) as a first source, alongside a second source, optimizing the fabrication of phase change material layers crucial for memory device functionality.

Career Highlights

Jin-il Lee's career has been prominently marked by his role at Samsung Electronics Co., Ltd., where he has been instrumental in pioneering research and development in memory technologies. His innovative mindset and technical expertise have propelled the company’s advancements in phase change materials.

Collaborations

Throughout his career, Jin-il Lee has collaborated with esteemed colleagues like Sung-lae Cho and Young-Lim Park. Their combined efforts in research have led to groundbreaking advancements in the field, fostering a productive environment for innovation within Samsung Electronics.

Conclusion

Jin-il Lee's contributions to phase change technology are significant, underscoring his role as a key inventor in this field. His ongoing research efforts and collaboration with fellow innovators continue to drive progress in memory device technology, solidifying his status as a notable figure in the realm of inventions.

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