The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Jun. 10, 2008
Applicants:
Young-lim Park, Gyeonggi-do, KR;
Sung-lae Cho, Gyeonggi-do, KR;
Byoung-jae Bae, Gyeonggi-do, KR;
Jin-il Lee, Gyeonggi-do, KR;
Hye-young Park, Gyeonggi-do, KR;
Inventors:
Young-Lim Park, Gyeonggi-do, KR;
Sung-Lae Cho, Gyeonggi-do, KR;
Byoung-Jae Bae, Gyeonggi-do, KR;
Jin-Il Lee, Gyeonggi-do, KR;
Hye-Young Park, Gyeonggi-do, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/44 (2006.01); H01L 21/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided are a phase change memory device and a method for forming the phase change memory device. The method includes forming a phase change material layer by providing reactive radicals to a substrate. The reactive radicals may comprise precursors for a phase change material and nitrogen.