The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Mar. 26, 2012
Byoung-jae Bae, Hwaseong-si, KR;
Sung-lae Cho, Yongin-si, KR;
Jin-il Lee, Seongnam-si, KR;
Hye-young Park, Seongnam-si, KR;
Do-hyung Kim, Seongnam-si, KR;
Byoung-jae Bae, Hwaseong-si, KR;
Sung-lae Cho, Yongin-si, KR;
Jin-il Lee, Seongnam-si, KR;
Hye-young Park, Seongnam-si, KR;
Do-hyung Kim, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NRRR, where R, Rand Rare each independently at least one selected from the group consisting of H, CH, CH, CH, CH, Si(CH), NH, NH(CH), N(CH), NH(CH) and N(CH).