The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2012
Filed:
Nov. 23, 2009
Gyu-hwan OH, Hwaseong-si, KR;
Young-lim Park, Hwaseong-si, KR;
Soon-oh Park, Suwon-si, KR;
Jin-il Lee, Seongnam-si, KR;
Chang-su Kim, Seongnam-si, KR;
Gyu-Hwan Oh, Hwaseong-si, KR;
Young-Lim Park, Hwaseong-si, KR;
Soon-Oh Park, Suwon-si, KR;
Jin-Il Lee, Seongnam-si, KR;
Chang-Su Kim, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
Provided is a method of fabricating a phase-change memory device. The phase-change memory device includes a memory cell having a switching device and a phase change pattern. The method includes; forming a TiC layer on a contact electrically connecting the switching device using a plasma enhanced cyclic chemical vapor deposition (PE-cyclic CVD) process, patterning the TiC layer to form a lower electrode on the contact, and forming the phase-change pattern on the lower electrode.