Samsung Electronics Co., Ltd.

Jin-il Lee

Sung-lae Cho

Young-Lim Park

Byoung-Jae Bae

Hye-Young Park

Han-jin Lim

Hye-young Park

Kwang-Hee Lee

Choong-Man Lee

Kwang-il Park

Dong-Hyun Im

Do-hyung Kim

Suk-Jin Chung

Do-Hyung Kim

Seung-Jun Bae

Ki-chul Kim

Young-Soo Sohn

Jae-Soon Lim

Wan-don Kim

Gyu-Hwan Oh

Hyeong-Geun An

Cha-Young Yoo

Dong-min Kim

Kyu-Ho Cho

Sang-Wook Lim

Ji-Eun Lim

Sung-Tae Kim

Cha-young Yoo

Ik-Soo Kim

Jong-Cheol Lee

Jung-Hyeon Kim

Ki-Vin Im

Soon-Oh Park

Jin-Yong Kim

Jae-Hyun Yeo

Jung-hee Chung

Dong-ho Ahn

Wan-Don Kim

Sung-Lae Cho

Kyoung-Ryul Yoon

Jin-Ha Jeong

Ho-Seok Seol

Sang-hyup Kwak

Si-Hong Kim

Chang-Su Kim

Myong-Woon Kim

Jin-Dong Kim

Suk-jin Chung

Urazaev Vladimir

Eun-Ae Chung

Seung-Back Shin

In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NRRR, where R, Rand Rare each independently at least one selected from the group consisting of H, CH, CH, CH, CH, Si(CH), NH, NH(CH), N(CH), NH(CH) and N(CH).

Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device

Provided are methods of forming a material layer by chemically adsorbing metal atoms to a substrate having anions formed on the surface thereof, and a method of fabricating a memory device by using the material layer forming method. Accordingly, a via hole with a small diameter can be filled with a material layer without forming voids or seams. Thus, a reliable memory device can be obtained.

Methods of forming a material layer and methods of fabricating a memory device

A data processing device for transmitting a first data includes a data generator configured to provide the first data, a cyclic redundancy check (CRC) generator configured to generate a CRC information having at least one bit whose binary value is modified in response to a toggle information, and a data transmitter configured to combine the CRC information and the first data as a combined data and output the combined data in serial. A data processing method for transmitting a first data includes a step of generating a first data, a step of generating cyclic redundancy check (CRC) information having at least one bit whose binary value is modified in response to a toggle information, and a step of generating a combined data by combining the generated CRC information and the first data as a combined data and outputting the combined data in serial.

Data processing device and method using error detection code, method of compensating for data skew, and semiconductor device having the data processing device

A data output buffer includes a driving unit and a control unit. The driving unit selectively performs a termination operation that provides a termination impedance to a transmission line coupled to an external pin, and a driving operation that provides a drive impedance to the transmission line while outputting read data. The control unit adjusts a value of the termination impedance and a value of the drive impedance based on an output voltage at the external pin during a termination mode, and controls the driving unit to selectively perform one of the termination operation and the driving operation during a driving mode.

Data output buffer and memory device

An on-die termination circuit includes a termination resistor unit connected to an external pin, and a termination control unit connected to the termination resistor unit. The termination resistor unit provides termination impedance to a transmission line connected to the external pin. The termination control unit varies the termination impedance in response to a plurality of bits of strength code associated with a data rate.

On-die termination circuit, data output buffer and semiconductor memory device

A germanium (Ge) compound is provided. The Ge compound has a chemical formula GeRxRy. 'R' is an alkyl group, and 'R' is one of hydrogen, amino group, allyl group and vinyl group. &#x201c;x&#x201d; is greater than zero and less than 4, and the sum of &#x201c;x&#x201d; and &#x201c;y&#x201d; is equal to 4. Methods of forming the Ge compound, methods of fabricating a phase change memory device using the Ge compound, and phase change memory devices fabricated using the Ge compound are also provided.

Germanium compound, semiconductor device fabricated using the same, and methods of forming the same

Provided are a phase change memory device and a method for forming the phase change memory device. The method includes forming a phase change material layer by providing reactive radicals to a substrate. The reactive radicals may comprise precursors for a phase change material and nitrogen.

Phase change memory device

Provided are methods of forming a phase change memory device. A semiconductor device having a lower electrode and an interlayer insulating layer may be prepared. The lower electrode may be surrounded by the interlayer insulating layer. Source gases, a reaction gas and a purge gas may be injected into a process chamber of a semiconductor fabrication device to form a phase change material layer on a semiconductor substrate. The source gases may be simultaneously injected into the process chamber. The phase change material layer may be in contact with the lower electrode through the interlayer insulating layer. The phase change material layer may be etched to form a phase change memory cell in the interlayer insulating layer. An upper electrode may be formed on the phase change memory cell.

Methods of forming a phase change memory device

Method of forming phase change material layer using Ge(II) source, and method of fabrication phase change memory device

Provided is a method of fabricating a phase-change memory device. The phase-change memory device includes a memory cell having a switching device and a phase change pattern. The method includes; forming a TiC layer on a contact electrically connecting the switching device using a plasma enhanced cyclic chemical vapor deposition (PE-cyclic CVD) process, patterning the TiC layer to form a lower electrode on the contact, and forming the phase-change pattern on the lower electrode.

Method of fabricating phase-change memory device having TiC layer

A method of forming a phase change material layer includes preparing a substrate having an insulator and a conductor, loading the substrate into a process housing, injecting a deposition gas into the process housing to selectively form a phase change material layer on an exposed surface of the conductor, and unloading the substrate from the process housing, wherein a lifetime of the deposition gas in the process housing is shorter than a time the deposition gas takes to react by thermal energy.

Method of forming a phase change material layer, method of forming a phase change memory device using the same, and a phase change memory device so formed

Provided are methods of forming contact structures and semiconductor devices fabricated using the contact structures. The formation of a contact structure can include forming a first molding pattern on a substrate, forming an insulating layer to cover at least a sidewall of the first molding pattern, forming a second molding pattern to cover a sidewall of the insulating layer and spaced apart from the first molding pattern, removing a portion of the insulating layer between the first and second molding patterns to form a hole, and forming an insulating pattern between the first and second molding patterns, and forming a contact pattern in the hole.

Methods of forming contact structures and semiconductor devices fabricated using contact structures

Method of forming a phase change memory device

The present invention provides metal precursors for low temperature deposition. The metal precursors include a metal ring compound including at least one metal as one of a plurality of elements forming a ring. Methods of forming a metal thin layer and manufacturing a phase change memory device including use of the metal precursors is also provided.

Metal precursors for low temperature deposition and methods of forming a metal thin layer and manufacturing a phase-change memory device using the metal precursors

Growing community of inventors

Seongnam-si, South Korea

Jin-il Lee