The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2011
Filed:
Apr. 20, 2007
Sung-lae Cho, Yongin-si, KR;
Choong-man Lee, Seoul, KR;
Jin-il Lee, Seongnam-si, KR;
Sang-wook Lim, Yongin-si, KR;
Hye-young Park, Seongnam-si, KR;
Young-lim Park, Anyang-si, KR;
Sung-Lae Cho, Yongin-si, KR;
Choong-Man Lee, Seoul, KR;
Jin-Il Lee, Seongnam-si, KR;
Sang-Wook Lim, Yongin-si, KR;
Hye-Young Park, Seongnam-si, KR;
Young-Lim Park, Anyang-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of forming a phase change material layer includes preparing a substrate having an insulator and a conductor, loading the substrate into a process housing, injecting a deposition gas into the process housing to selectively form a phase change material layer on an exposed surface of the conductor, and unloading the substrate from the process housing, wherein a lifetime of the deposition gas in the process housing is shorter than a time the deposition gas takes to react by thermal energy.