The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Nov. 30, 2009
Young-lim Park, Hwaseong-si, KR;
Hyeong-geun an, Hwaseong-si, KR;
Gyu-hwan OH, Hwaseong-si, KR;
Dong-ho Ahn, Suwon-si, KR;
Jin-il Lee, Seongnam-si, KR;
Young-Lim Park, Hwaseong-si, KR;
Hyeong-Geun An, Hwaseong-si, KR;
Gyu-Hwan Oh, Hwaseong-si, KR;
Dong-Ho Ahn, Suwon-si, KR;
Jin-Il Lee, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided are methods of forming contact structures and semiconductor devices fabricated using the contact structures. The formation of a contact structure can include forming a first molding pattern on a substrate, forming an insulating layer to cover at least a sidewall of the first molding pattern, forming a second molding pattern to cover a sidewall of the insulating layer and spaced apart from the first molding pattern, removing a portion of the insulating layer between the first and second molding patterns to form a hole, and forming an insulating pattern between the first and second molding patterns, and forming a contact pattern in the hole.